Hiroshima University Nano Device Research Institute is recruiting participants for the 2023 Semiconductor CMOS Practical Program. This program is normally held in the summer, but this year it was held in the winter due to equipment maintenance.
 

Practical theme:

CMOS transistor/IC manufacturing training

 

Students:

(Type A) Circuit design/prototype/measurement practice/lecture

(Type B) Prototype tour/lecture
 

period:

(Type A) 6 days from Monday, December 11, 2023 to Saturday, December 16, 2023

(Type B) 3 days from Tuesday, December 12, 2023 to Thursday, December 14, 2023
 

Recruitment personnel:

(Type A) 12 people (Participation fee: 60,000 yen)

(Type B) 12 people (Participation fee: 30,000 yen)
 

How to attend:

(Type A) This will be on-site training and lectures.

(Type B) Local satellite venue

(Online prototype tour and lecture in lecture room). Remote courses available upon request.

​

place:

Hiroshima University Nanodevice Research Institute
(Using a super clean room (highest class 10, floor area 830m2))

application:

Please apply from the web page below.

https://forms.office.com/r/nUYcMRskcs

Applications will be accepted on a first-come, first-served basis and will be closed once the capacity is reached.

Those who have applied will be notified via email of whether or not they can participate and the application form.
 

If you have any questions, please contact us below.

Hiroshima University Nanodevice Research Institute
Shinichiro Kuroki, Tetsuo Tabei